Basic Principles of Power Electronics by Prof. Dr.-Ing. Klemens Heumann (auth.)

By Prof. Dr.-Ing. Klemens Heumann (auth.)

The expertise embodied through the identify «power electronics» is complicated. It involves either strength point and sign point electronics, in addition to thermal, mechanical, keep watch over, and safeguard platforms. the ability circuit, that a part of the method really processing strength, could be considered an amplifier round that's put a closed loop keep watch over system.
The aim of this ebook is to supply an simply understood exposition of the foundations of strength electronics. universal good points of structures and their habit are pointed out with a purpose to facilitate figuring out. Thyristor converters are unique and handled in accordance with their mode of commutation. Circuits for varied converters and their controls are provided, in addition to an outline of ancillary circuits equivalent to these required for snubbing and gate drives.
Thermal and electric homes of semiconductor strength units are mentioned. The line-converter and converter-load interfaces are tested, resulting in a few normal statements being made approximately power move. software parts are pointed out and categorised with admire to energy and frequency levels. the various tables provided within the publication offer an simply used reference resource.

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The recovery effect snubber circuit should be designed accordingly. In fact the conditions are somewhat more favourable than illustrated in Fig. 2, because the thyristor current decays with a finite rate of fall at the end of the recovery time. 2 Rate of Rise of Voltage (du/dt) Limitation In combination with series connected inductances the snubber circuit also limits the rate of rise of voltage du/dt across the thyristor at moments of switching. 3 shows a simplified equivalent circuit for calculating the du/dt stress.

When the equivalent switch is closed at moment to a damped series resonant circuit is again formed whose response can be calculated with appropriate boundary conditions in accordance with Eqs. 3). In Fig. S IlF, RB = 10 n and the commutating voltage Uk = SOO V assuming that the capacitor voltage U c = 0 at moment to. Damped oscillations result for the voltage and current. lS t- b Fig. 3a,b. Equivalent circuit for calculation of the du/dt stresses. a Equivalent circuit; b current and voltage characteristics The maximum rate of rise of voltage in the thyristor occurs at moment to.

Large diameter silicon crystals can thus be manufactured with highly homogenous doping. This neutron-doped silicon material (NDS) can be used to build high-current thyristors with a crystal diameter of over 100 mm. 4 Types of Thyristor Until now the standard thyristor has been described using a characteristic curve in accordance with Fig. 7. To be more accurate this is a reverse blocking thyristor triode controlled on the cathode side. Besides this there is a whole series of other types of thyristors.

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